TY - JOUR
T1 - Electrical properties of C19H20N2O 4SW based molecular-materials thin films prepared by electrodeposited technique
AU - Sánchez-Vergara, M. E.
AU - Álvarez-Toledano, C.
AU - Cedillo-Cruz, A.
AU - Moreno, A.
AU - Reider-Burstin, J. N.
PY - 2013/2/1
Y1 - 2013/2/1
N2 - Semiconductor molecular-material thin films of Fischer carbene tungsten(0) have been prepared by electro-deposition in the electrochemical module of the atomic force microscope (AFM). This use of the AFM is proposed as a more efficient way to generate molecular materials, as it permits thin-film synthesis to be monitored and manipulated before characterization. The films thus obtained were characterized by infrared (FTIR), AFM and energy dispersive spectroscopy. The molecular material thin films exhibit the same intra-molecular bonds and the chemistry composition as the original compounds. The effect of temperature on conductivity was also measured in these samples: its behavior found as pertaining to a semiconducting material. The activation energies of thin films are determined from Arrhenius plots with these energies being within the range from 0.4 to 1.82 eV. The electrical transport properties for the thin films were determined by their chemical structure.
AB - Semiconductor molecular-material thin films of Fischer carbene tungsten(0) have been prepared by electro-deposition in the electrochemical module of the atomic force microscope (AFM). This use of the AFM is proposed as a more efficient way to generate molecular materials, as it permits thin-film synthesis to be monitored and manipulated before characterization. The films thus obtained were characterized by infrared (FTIR), AFM and energy dispersive spectroscopy. The molecular material thin films exhibit the same intra-molecular bonds and the chemistry composition as the original compounds. The effect of temperature on conductivity was also measured in these samples: its behavior found as pertaining to a semiconducting material. The activation energies of thin films are determined from Arrhenius plots with these energies being within the range from 0.4 to 1.82 eV. The electrical transport properties for the thin films were determined by their chemical structure.
UR - http://www.scopus.com/inward/record.url?scp=84878524789&partnerID=8YFLogxK
U2 - 10.1007/s10854-012-0788-4
DO - 10.1007/s10854-012-0788-4
M3 - Artículo
AN - SCOPUS:84878524789
SN - 0957-4522
VL - 24
SP - 662
EP - 666
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 2
ER -