Electrical properties of C19H20N2O 4SW based molecular-materials thin films prepared by electrodeposited technique

M. E. Sánchez-Vergara, C. Álvarez-Toledano, A. Cedillo-Cruz, A. Moreno, J. N. Reider-Burstin

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Abstract

Semiconductor molecular-material thin films of Fischer carbene tungsten(0) have been prepared by electro-deposition in the electrochemical module of the atomic force microscope (AFM). This use of the AFM is proposed as a more efficient way to generate molecular materials, as it permits thin-film synthesis to be monitored and manipulated before characterization. The films thus obtained were characterized by infrared (FTIR), AFM and energy dispersive spectroscopy. The molecular material thin films exhibit the same intra-molecular bonds and the chemistry composition as the original compounds. The effect of temperature on conductivity was also measured in these samples: its behavior found as pertaining to a semiconducting material. The activation energies of thin films are determined from Arrhenius plots with these energies being within the range from 0.4 to 1.82 eV. The electrical transport properties for the thin films were determined by their chemical structure.

Original languageEnglish
Pages (from-to)662-666
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume24
Issue number2
DOIs
StatePublished - 1 Feb 2013

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