TY - JOUR
T1 - Investigation of optical properties of annealed aluminum phthalocyanine derivatives thin films
AU - Sánchez-Vergara, M. E.
AU - Rivera, M.
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Semiconducting molecular materials based on aluminum phthalocyanine chloride (AlPcCl) and bidentate amines have been successfully used to prepare thin films by using a thermal evaporation technique. The morphology of the deposited films was studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Studies of the optical properties were carried out on films deposited onto quartz and (1 0 0) monocrystalline silicon wafers and films annealed after deposition. The absorption spectra recorded in the UV-vis region for the as-deposited and annealed samples showed two absorption bands, namely the Q- and B-bands. In addition, an energy doublet in the absorption spectra of the monoclinic form at 1.81 and 1.99 eV was observed. A band-model theory was employed in order to determine the optical parameters. The fundamental energy gap (direct transitions) was determined to be within the 2.47-2.59 and 2.24-2.44 eV ranges, respectively, for the as-deposited and annealed thin films.
AB - Semiconducting molecular materials based on aluminum phthalocyanine chloride (AlPcCl) and bidentate amines have been successfully used to prepare thin films by using a thermal evaporation technique. The morphology of the deposited films was studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Studies of the optical properties were carried out on films deposited onto quartz and (1 0 0) monocrystalline silicon wafers and films annealed after deposition. The absorption spectra recorded in the UV-vis region for the as-deposited and annealed samples showed two absorption bands, namely the Q- and B-bands. In addition, an energy doublet in the absorption spectra of the monoclinic form at 1.81 and 1.99 eV was observed. A band-model theory was employed in order to determine the optical parameters. The fundamental energy gap (direct transitions) was determined to be within the 2.47-2.59 and 2.24-2.44 eV ranges, respectively, for the as-deposited and annealed thin films.
KW - A. Electronic materials
KW - A. Thin films
KW - D. Optical properties
UR - http://www.scopus.com/inward/record.url?scp=84894207495&partnerID=8YFLogxK
U2 - 10.1016/j.jpcs.2014.01.006
DO - 10.1016/j.jpcs.2014.01.006
M3 - Artículo
AN - SCOPUS:84894207495
SN - 0022-3697
VL - 75
SP - 599
EP - 605
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 5
ER -