TY - JOUR
T1 - Molecular materials derived from MPc (M=Fe, Pb, Co) and 1,8-dihydroxiantraquinone thin films
T2 - Formation, electrical and optical properties
AU - Sánchez Vergara, M. E.
AU - Ortiz Rebollo, A.
AU - Alvarez, J. R.
AU - Rivera, M.
PY - 2008/1/1
Y1 - 2008/1/1
N2 - Semiconductor-like thin films were grown using metallic phthalocyanines (MPc) (M=Fe, Pb, Co) and 1,8 dihydroxiantraquinone as initial compounds. The morphology of the deposited films was studied by using scanning electron microscopy and atomic force microscopy. The powder and thin-film samples of the synthesized materials, deposited by vacuum thermal evaporation, showed the same intra-molecular bonds as in IR spectroscopy studies, which suggests that the evaporation process does not alter these bonds. The optical band gap values of C60H28N8O8Fe, C60H28N8O8Pb and C60H28N8O8Co calculated from the absorption coefficient were found to be 1.60, 1.89 and 1.75 eV, respectively, arising from non-direct transitions. The effect of temperature on conductivity was also measured in these samples. It was found that the temperature-dependent electric current in all cases showed a semiconductor behavior with conductivities in the order of 10-6 Ω-1 cm-1 where the highest value corresponded to the cobalt material. The linear dependence observed in the films implies only one type of conduction mechanism in all cases, with mean activation energies of the order of 1.55, 1.77 and 1.50 eV for iron, lead and cobalt-based thin films, respectively.
AB - Semiconductor-like thin films were grown using metallic phthalocyanines (MPc) (M=Fe, Pb, Co) and 1,8 dihydroxiantraquinone as initial compounds. The morphology of the deposited films was studied by using scanning electron microscopy and atomic force microscopy. The powder and thin-film samples of the synthesized materials, deposited by vacuum thermal evaporation, showed the same intra-molecular bonds as in IR spectroscopy studies, which suggests that the evaporation process does not alter these bonds. The optical band gap values of C60H28N8O8Fe, C60H28N8O8Pb and C60H28N8O8Co calculated from the absorption coefficient were found to be 1.60, 1.89 and 1.75 eV, respectively, arising from non-direct transitions. The effect of temperature on conductivity was also measured in these samples. It was found that the temperature-dependent electric current in all cases showed a semiconductor behavior with conductivities in the order of 10-6 Ω-1 cm-1 where the highest value corresponded to the cobalt material. The linear dependence observed in the films implies only one type of conduction mechanism in all cases, with mean activation energies of the order of 1.55, 1.77 and 1.50 eV for iron, lead and cobalt-based thin films, respectively.
KW - A. Thin films
KW - B. Chemical synthesis
KW - D. Electrical properties
KW - D. Optical properties
KW - D. Semiconductivity
UR - http://www.scopus.com/inward/record.url?scp=37249037565&partnerID=8YFLogxK
U2 - 10.1016/j.jpcs.2007.07.084
DO - 10.1016/j.jpcs.2007.07.084
M3 - Artículo
AN - SCOPUS:37249037565
SN - 0022-3697
VL - 69
SP - 1
EP - 7
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 1
ER -