Optoelectronic Properties Improvement of pm-Si:H Films with Silane Flux Variation

L. Hamui, G. Santana

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

this work describes the effect of silane flux on pm-Si:H films deposited by pecvd, with 3.5 torr, 210 °C and silane flux between 16-40 sccm. The augment of the silane flux increase the deposition rate to 2.3 A/s. The crystalline fraction varies from 9% to 17%. Exodiffusion experiments were related to structural and optical properties to understand their growth by analysis of bonding environment. The hydrogen stability and its amount bonded in these films are enhanced as the flux decreases. The optical gap decrease from 1.76 to 1.7 eV with silane flux. These could improve the stability of photovoltaic devices.

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2010-2012
Number of pages3
ISBN (Electronic)9781538685297
DOIs
StatePublished - 26 Nov 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Publication series

Name2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/TerritoryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

Keywords

  • diffusion
  • optical properties
  • photovoltaic cell
  • polymorphous silicon

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