Phase stability in MoTe2 prepared by low temperature Mo tellurization using close space isothermal Te annealing

E. Sánchez-Montejo; G. Santana; A. Domínguez; L. Huerta; L. Hamui; M. López-López; H. Limborço; F. M. Matinaga; M. I.N. da Silva; A. G. de Oliveira; J. C. González; O. de Melo

doi:10.1016/j.matchemphys.2017.06.031

Phase stability in MoTe₂ prepared by low temperature Mo tellurization using close space isothermal Te annealing

E. Sánchez-Montejo, G. Santana, A. Domínguez, L. Huerta, L. Hamui, M. López-López, H. Limborço, F. M. Matinaga, M. I.N. da Silva, A. G. de Oliveira, J. C. González, O. de Melo

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12 Scopus citations

Abstract

In this work, we used isothermal close space (ICS) Te annealings in pure H₂ atmosphere for the tellurization of Mo oxide thin films. Differently to previous open tube tellurization annealings, ICS is expected to provide a higher Te vapor pressure because the chamber containing the Te source and the substrate is very small and semi-closed. Then, we used a relatively low temperature of 500 °C at which, according to the phase diagram, 2H phase should be stable. However, we observed that, in all cases, Mo oxide initially transformed to 1T′ before reaching the equilibrium 2H phase. Highly oriented MoTe₂ films with the [001] direction perpendicular to the surface were obtained in all samples. On the other hand, according our X-ray photoelectron spectroscopy measurements, we report shifts of 0.38/0.27 eV in the 3d emission of Te/Mo between the two different phases which probably have a chemical origin.

Original language	English
Pages (from-to)	317-323
Number of pages	7
Journal	Materials Chemistry and Physics
Volume	198
DOIs	https://doi.org/10.1016/j.matchemphys.2017.06.031
State	Published - 1 Sep 2017

Keywords

2D materials
MoTe
Phase stability
Transition metals dichalcogenides

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10.1016/j.matchemphys.2017.06.031

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Sánchez-Montejo, E., Santana, G., Domínguez, A., Huerta, L., Hamui, L., López-López, M., Limborço, H., Matinaga, F. M., da Silva, M. I. N., de Oliveira, A. G., González, J. C., & de Melo, O. (2017). Phase stability in MoTe₂ prepared by low temperature Mo tellurization using close space isothermal Te annealing. Materials Chemistry and Physics, 198, 317-323. https://doi.org/10.1016/j.matchemphys.2017.06.031

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title = "Phase stability in MoTe2 prepared by low temperature Mo tellurization using close space isothermal Te annealing",

abstract = "In this work, we used isothermal close space (ICS) Te annealings in pure H2 atmosphere for the tellurization of Mo oxide thin films. Differently to previous open tube tellurization annealings, ICS is expected to provide a higher Te vapor pressure because the chamber containing the Te source and the substrate is very small and semi-closed. Then, we used a relatively low temperature of 500 °C at which, according to the phase diagram, 2H phase should be stable. However, we observed that, in all cases, Mo oxide initially transformed to 1T′ before reaching the equilibrium 2H phase. Highly oriented MoTe2 films with the [001] direction perpendicular to the surface were obtained in all samples. On the other hand, according our X-ray photoelectron spectroscopy measurements, we report shifts of 0.38/0.27 eV in the 3d emission of Te/Mo between the two different phases which probably have a chemical origin.",

keywords = "2D materials, MoTe, Phase stability, Transition metals dichalcogenides",

author = "E. S{\'a}nchez-Montejo and G. Santana and A. Dom{\'i}nguez and L. Huerta and L. Hamui and M. L{\'o}pez-L{\'o}pez and H. Limbor{\c c}o and Matinaga, {F. M.} and {da Silva}, {M. I.N.} and {de Oliveira}, {A. G.} and Gonz{\'a}lez, {J. C.} and {de Melo}, O.",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

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doi = "10.1016/j.matchemphys.2017.06.031",

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Sánchez-Montejo, E, Santana, G, Domínguez, A, Huerta, L, Hamui, L, López-López, M, Limborço, H, Matinaga, FM, da Silva, MIN, de Oliveira, AG, González, JC & de Melo, O 2017, 'Phase stability in MoTe₂ prepared by low temperature Mo tellurization using close space isothermal Te annealing', Materials Chemistry and Physics, vol. 198, pp. 317-323. https://doi.org/10.1016/j.matchemphys.2017.06.031

TY - JOUR

T1 - Phase stability in MoTe2 prepared by low temperature Mo tellurization using close space isothermal Te annealing

AU - Sánchez-Montejo, E.

AU - Santana, G.

AU - Domínguez, A.

AU - Huerta, L.

AU - Hamui, L.

AU - López-López, M.

AU - Limborço, H.

AU - Matinaga, F. M.

AU - da Silva, M. I.N.

AU - de Oliveira, A. G.

AU - González, J. C.

AU - de Melo, O.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - In this work, we used isothermal close space (ICS) Te annealings in pure H2 atmosphere for the tellurization of Mo oxide thin films. Differently to previous open tube tellurization annealings, ICS is expected to provide a higher Te vapor pressure because the chamber containing the Te source and the substrate is very small and semi-closed. Then, we used a relatively low temperature of 500 °C at which, according to the phase diagram, 2H phase should be stable. However, we observed that, in all cases, Mo oxide initially transformed to 1T′ before reaching the equilibrium 2H phase. Highly oriented MoTe2 films with the [001] direction perpendicular to the surface were obtained in all samples. On the other hand, according our X-ray photoelectron spectroscopy measurements, we report shifts of 0.38/0.27 eV in the 3d emission of Te/Mo between the two different phases which probably have a chemical origin.

AB - In this work, we used isothermal close space (ICS) Te annealings in pure H2 atmosphere for the tellurization of Mo oxide thin films. Differently to previous open tube tellurization annealings, ICS is expected to provide a higher Te vapor pressure because the chamber containing the Te source and the substrate is very small and semi-closed. Then, we used a relatively low temperature of 500 °C at which, according to the phase diagram, 2H phase should be stable. However, we observed that, in all cases, Mo oxide initially transformed to 1T′ before reaching the equilibrium 2H phase. Highly oriented MoTe2 films with the [001] direction perpendicular to the surface were obtained in all samples. On the other hand, according our X-ray photoelectron spectroscopy measurements, we report shifts of 0.38/0.27 eV in the 3d emission of Te/Mo between the two different phases which probably have a chemical origin.

KW - 2D materials

KW - MoTe

KW - Phase stability

KW - Transition metals dichalcogenides

UR - http://www.scopus.com/inward/record.url?scp=85024386365&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2017.06.031

DO - 10.1016/j.matchemphys.2017.06.031

M3 - Artículo

AN - SCOPUS:85024386365

SN - 0254-0584

VL - 198

SP - 317

EP - 323

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

ER -

Phase stability in MoTe₂ prepared by low temperature Mo tellurization using close space isothermal Te annealing

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Keywords

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