TY - JOUR
T1 - Preparation of hybrid devices containing nylon/M(II)Pc-TTF (M=Cu, Zn) films with potential optical and electrical applications
AU - Sánchez-Vergara, María Elena
AU - López-Romero, Diana Monserrat
AU - Vidal-García, Pablo
AU - Jiménez-Jarquín, Christian
AU - Hernandez-García, Aline
AU - Jiménez-Sandoval, Omar
N1 - Publisher Copyright:
© 2017, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - Hybrid devices consisting of metallophthalocyanines, MPcs (M=Zn, Cu), doped with a Tetrathiafulvalene (TTF) derivative and dispersed in nylon 11 have been prepared by using a thermal evaporation technique. The effects of thermal relaxation on the structure and morphology of the samples were studied by FT-IR spectroscopy, SEM and X-ray diffraction. The thermal relaxation in nylon 11 produced a crystalline arrangement in the α- and β-form MPc molecules. Changes in conductivity of the devices suggest the formation of alternative paths for carrier conduction. It was found that the temperature-dependent electric current in Zn devices showed a semiconductor behavior. Finally, the optical direct and indirect band gap of these hybrid devices was evaluated from optical absorption measurements. The band gap values were found to decrease from 3.7 to 1.38 eV (for the ZnPc device), and from 1.9 to 1.1 eV (for the CuPc device), with the addition of TTF in the polymeric matrix. [Figure not available: see fulltext.]
AB - Hybrid devices consisting of metallophthalocyanines, MPcs (M=Zn, Cu), doped with a Tetrathiafulvalene (TTF) derivative and dispersed in nylon 11 have been prepared by using a thermal evaporation technique. The effects of thermal relaxation on the structure and morphology of the samples were studied by FT-IR spectroscopy, SEM and X-ray diffraction. The thermal relaxation in nylon 11 produced a crystalline arrangement in the α- and β-form MPc molecules. Changes in conductivity of the devices suggest the formation of alternative paths for carrier conduction. It was found that the temperature-dependent electric current in Zn devices showed a semiconductor behavior. Finally, the optical direct and indirect band gap of these hybrid devices was evaluated from optical absorption measurements. The band gap values were found to decrease from 3.7 to 1.38 eV (for the ZnPc device), and from 1.9 to 1.1 eV (for the CuPc device), with the addition of TTF in the polymeric matrix. [Figure not available: see fulltext.]
KW - electrical properties
KW - hybrid devices
KW - optical properties
KW - organic semiconductors
KW - thin films
UR - http://www.scopus.com/inward/record.url?scp=85018913112&partnerID=8YFLogxK
U2 - 10.1007/s13391-017-6086-9
DO - 10.1007/s13391-017-6086-9
M3 - Artículo
AN - SCOPUS:85018913112
SN - 1738-8090
VL - 13
SP - 191
EP - 200
JO - Electronic Materials Letters
JF - Electronic Materials Letters
IS - 3
ER -