TY - JOUR
T1 - Synthesis and characterization of NiPcTSTNa(L) thin films
AU - Sánchez-Vergara, M. E.
AU - García-Montalvo, V.
AU - Santoyo-Salazar, J.
AU - Fragoso-Soriano, R. J.
AU - Jiménez-Sandoval, O.
PY - 2012/10/1
Y1 - 2012/10/1
N2 - NiPcTSTNa(L) [L=ethylenediamine (EDA); 1,4-diaminobutane (BDA); and 2,6-diamineanthraquinone (AqDA)] thin films were deposited by thermal evaporation. Their surface morphology was studied by AFM and SEM, and their chemical composition determined by EDS. Optical absorption studies of NiPcTSTNa(L) films were performed in the 200-1150 nm wavelength range. The optical bandgap of thin films was determined from the (αhv)1/2 vs hv plots for indirect allowed transitions. The temperature dependence of electrical conductivity shows a semiconducting behaviour. The amorphous semiconductor films show thermal activation energies of electrical conduction between 3·3 and 3·7 eV.
AB - NiPcTSTNa(L) [L=ethylenediamine (EDA); 1,4-diaminobutane (BDA); and 2,6-diamineanthraquinone (AqDA)] thin films were deposited by thermal evaporation. Their surface morphology was studied by AFM and SEM, and their chemical composition determined by EDS. Optical absorption studies of NiPcTSTNa(L) films were performed in the 200-1150 nm wavelength range. The optical bandgap of thin films was determined from the (αhv)1/2 vs hv plots for indirect allowed transitions. The temperature dependence of electrical conductivity shows a semiconducting behaviour. The amorphous semiconductor films show thermal activation energies of electrical conduction between 3·3 and 3·7 eV.
KW - Electrical conductivity
KW - Optical absorption
KW - Semiconductors
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=84868223100&partnerID=8YFLogxK
U2 - 10.1007/s12034-012-0356-9
DO - 10.1007/s12034-012-0356-9
M3 - Artículo
AN - SCOPUS:84868223100
SN - 0250-4707
VL - 35
SP - 759
EP - 766
JO - Bulletin of Materials Science
JF - Bulletin of Materials Science
IS - 5
ER -